A first loss evaluation using a vertical SiC-JFET and a conventional Si-IGBT in the bidirectional matrix converter switch topology

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Domes, D ^a   Hofmann, W ^a   Lutz, J ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Device application; Efficiency; IGBT; JFET; Matrix converter; SiC device

Indexed keywords

ELECTRIC CONVERTERS; ELECTRIC LOSSES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MATRIX ALGEBRA; SILICON CARBIDE; SWITCHING;

DEVICE APPLICATION; MATRIX CONVERTERS; SIC-DEVICE; SWITCHING LOSS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33947637620     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/epe.2005.219281     Document Type: Conference Paper

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