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Volumn 1, Issue , 2004, Pages 10-15

Future of power semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE; THYRISTORS;

EID: 8744306066     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (24)

References (24)
  • 1
    • 8744247218 scopus 로고
    • Characteristics of a new 50A, 500V high power MOSFET module manifested for high frequency inverter applications
    • June, Proceedings
    • G. Majumdar, Y. Yamitani, Y. Yu, and H. Iwamoto, "Characteristics of a New 50A, 500V High Power MOSFET Module Manifested for High Frequency Inverter Applications", PCI, June, 1986 Proceedings.
    • (1986) PCI
    • Majumdar, G.1    Yamitani, Y.2    Yu, Y.3    Iwamoto, H.4
  • 2
    • 0034827495 scopus 로고    scopus 로고
    • Power semiconductors in transmission and distribution applications
    • June, Proceedings
    • R. Chokhawala, B. Danielsson, and L. Angquist, "Power Semiconductors in Transmission and Distribution Applications", IEEE-ISPSD, June, 2001 Proceedings.
    • (2001) IEEE-ISPSD
    • Chokhawala, R.1    Danielsson, B.2    Angquist, L.3
  • 3
    • 0031634820 scopus 로고    scopus 로고
    • GCT (gate commutated turn-off) thyristor and gate drive circuit
    • Conference Records
    • M. Yamamoto, K. Satoh, T. Nakagawa, and A. Kawakami, "GCT (Gate Commutated Turn-Off) Thyristor and Gate Drive Circuit", IEEE-PESC, 1998 Conference Records.
    • (1998) IEEE-PESC
    • Yamamoto, M.1    Satoh, K.2    Nakagawa, T.3    Kawakami, A.4
  • 5
    • 0020310822 scopus 로고
    • The insulated gate rectifier
    • B.J. Baliga, et al., "The Insulated Gate Rectifier", IEDM Abstract 10.6, pp. 264-267, 1982.
    • (1982) IEDM Abstract 10.6 , pp. 264-267
    • Baliga, B.J.1
  • 14
    • 0029191079 scopus 로고
    • Application specific IPM for low power-end motor drives
    • Proceedings
    • G. Majumdar, S. Hatae, M. Fukunaga, and T. Oota, "Application Specific IPM for Low Power-end Motor Drives", IEEE-ISPSD, 1995 Proceedings.
    • (1995) IEEE-ISPSD
    • Majumdar, G.1    Hatae, S.2    Fukunaga, M.3    Oota, T.4
  • 22
    • 4944251659 scopus 로고    scopus 로고
    • 1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter
    • Proceedings
    • H. Takahashi, M. Kaneda, and T. Minato, "1200V class Reverse Blocking IGBT (RB-IGBT) for AC Matrix Converter", IEEE-ISPSD, 2004 Proceedings.
    • (2004) IEEE-ISPSD
    • Takahashi, H.1    Kaneda, M.2    Minato, T.3
  • 23
    • 4944262468 scopus 로고    scopus 로고
    • Development of high current transfer-mold type power module with high heat-cycle durability
    • Proceedings
    • T. Sasaki, H. Takao, T. Shikano, S. Fujita, D. Nakajima and T. Shinohara, "Development of High Current Transfer-mold type Power Module with High Heat-cycle Durability", IEEE-ISPSD, 2004 Proceedings.
    • (2004) IEEE-ISPSD
    • Sasaki, T.1    Takao, H.2    Shikano, T.3    Fujita, S.4    Nakajima, D.5    Shinohara, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.