ARXPS study of the ion mobility through (HfO2) x(SiO2)1-x formed on air-exposed HfSi 0.5As1.5

Surface and Interface Analysis

Volumn 40, Issue 3-4, 2008, Pages 490-494

  Grosvenor, Andrew P ^a   Cavell, Ronald G ^a   Mar, Arthur ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Arsenide; ARXPS; Hf silicate; Oxidation

Indexed keywords

AMORPHOUS SILICON; OXIDATION; OXIDE FILMS; SILICA; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY;

LOGARITHMIC KINETICS;

HAFNIUM COMPOUNDS;

EID: 42449097120     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2680     Document Type: Conference Paper

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