Analysis of the electronic structure of Hf(Si0.5As0.5)As by X-ray photoelectron and photoemission spectroscopy

Journal of Solid State Chemistry

Volumn 180, Issue 10, 2007, Pages 2670-2681

  Grosvenor, Andrew P ^a   Cavell, Ronald G ^a   Mar, Arthur ^a   Blyth, Robert I R ^b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b CANADIAN LIGHT SOURCE INC   (Canada)

Author keywords

Arsenide; Crystal structure; Electronic structure; Photoemission spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; SYNCHROTRON RADIATION; VALENCE BANDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE ASSIGNMENTS; PHOTOIONIZATION CROSS-SECTIONS; TERNARY HAFNIUM SILICON ARSENIDE; VALENCE BAND SPECTRUM;

HAFNIUM ALLOYS;

EID: 35348898639     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2007.07.015     Document Type: Article

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