Characterization and modelling of nano-crystals for single electron memory point devices

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2001-January, Issue , 2001, Pages 39-42

  Montes, Laurent ^a   Baron, Thierry ^a   De Salvo, Barbara ^b   Ferraton, Stéphane ^a   Zimmermann, Jacques ^a   Gautier, Jacques ^b  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY ARRAY; NON-VOLATILE; SILICON DOTS; SIMPLE MODELING; SINGLE ELECTRON MEMORY;

MICROELECTRONICS;

EID: 4244112322     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2001.997481     Document Type: Conference Paper

References (5)

1. K. K. Likharev, Single: electron devices and their application, Proc. IEEE, Vol. 87, pp. 606-632 (1999).
2. B. de Salvo et al, Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices, IEEE Trans. Electron Devices (2001, in press).
3. y substrates for nanoelectronic devices, J. Crystal Growth, Vol. 290, pp. 1004-8 (2000).
4. B. de Salvo et al, Investigation of dynamic memory effects in Si-dot devices, ESSDERC 2000, Cork, Ireland (Sept. 2000).
5. nd edition, 1980) Chapter 7.