Photoluminescence and EPR studies of porous silicon

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 400-402

  Torchinskaya, T V ^a   Baran, N P ^a   Korsunskaya, N E ^a   Dzhumaev, B R ^a   Khomenkova, L Yu ^a   Sheinkman, M K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Electron paramagnetic resonance; Photoluminescence; Photoluminescence excitation; Porous silicon

Indexed keywords

ELECTRON SPIN RESONANCE SPECTROSCOPY; EMISSION SPECTROSCOPY; ETCHING; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ELECTROCHEMICAL ETCHING; PHOTOLUMINESCENCE EXCITATION SPECTRA; PHOTOLUMINESCENCE INTENSITY; SILICON OXIDE SURFACE CENTER; ULTRA VIOLET EXCITATION;

POROUS SILICON;

EID: 0031164390     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00415-2     Document Type: Article

References (3)

1. T.V. Torchinskaya, N.E. Korsunskaya, B. Dzhumaev, L. Yu. Khomenkova and B.M. Bulakh, Fiz. Tekh. Polup (1996), in press.
2. H. Ono, H. Gomyou, H. Morisaki and S. Nosaki, J. Electrochemic. Soc. 140 (1993) L180
3. S.M. Prokes, O.J. Glembocki, R. Kaplan and V.M. Bermudez, Phys. Rev. B 45 (1992) 13 788.