Atomistic modeling of high-concentration effects of impurity diffusion in silicon

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7595-7607

  List, S ^a   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542736444     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367875     Document Type: Article

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