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Volumn 353-356, Issue , 2001, Pages 11-14

Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; IMAGING TECHNIQUES; MATHEMATICAL MODELS; MORPHOLOGY; THERMAL EFFECTS; TRANSPORT PROPERTIES; VAPORS; X RAYS;

DIGITAL X RAY IMAGING; PHYSICAL VAPOR TRANSPORT; SOURCE MATERIAL; TEMPERATURE FIELD; VAPOR TRANSPORT;

SILICON CARBIDE;

EID: 4243469714 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.11 Document Type: Article

Times cited : (6)

References (10)

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