Raman microprobe assessment of low-pressure chemical vapor deposition-grown 4H-SiC epilayers

Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 509-513

  Tin, C C ^a   Hu, R ^a   Liu, J ^b   Vohra, Y ^b   Feng, Z C ^c  

^a AUBURN UNIVERSITY   (United States)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; LATTICE VIBRATIONS; MORPHOLOGY; PHONONS; RAMAN SCATTERING; SILICON CARBIDE;

EPILAYERS; INTERATOMIC VIBRATIONAL MODES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURAL DISORDER; PEAK INTENSITY; RAMAN MICROPROBE ASSESSMENT; RELATIVE INTENSITY;

CRYSTAL GROWTH;

EID: 0030086478     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00463-7     Document Type: Article

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