Photoluminescence and raman scattering characterization of GaN, InGaN and AlGaN films using a UV excitation Raman-photoluminescence microscope

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1359-1362

  Feng, Z C ^a   Schurman, M ^a   Tran, C A ^a   Salagaj, T ^a   Karlicek, B ^a   Ferguson, I ^a   Stall, R A ^a   Dyer, C D ^b   Williams, K P J ^b   Pitt, G D ^b  

^a EMCORE CORPORATION   (United States)

^b RENISHAW PLC   (United Kingdom)

Author keywords

AlGaN; GaN; InGaN; Microscope; Photoluminescence; Raman Scattering

Indexed keywords

ELECTRON RESONANCE; ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; INFRARED SPECTROMETERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ULTRAVIOLET RAMAN PHOTOLUMINESCENCE MICROSCOPES;

SEMICONDUCTING FILMS;

EID: 4243236114     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1359     Document Type: Article

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