A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 530, Issue 1-2, 2004, Pages 98-104

  Batignani, G ^a   Angelini, C ^a   Bisogni, M G ^a   Boscardin, M ^b   Bettarini, S ^a   Bondioli, M ^a   Bosisio, L ^c   Bucci, F ^a   Calderini, G ^a   Carpinelli, M ^a   Ciacchi, M ^c   Dalla Betta, G F ^d   Dittongo, S ^c   Forti, F ^a   Giorgi, M A ^a   Gregori, P ^b   Han, D J ^e   Manfredi, P F ^f   Manghisoni, M ^g   Marchiori, G ^a   Neri, N ^a   Novelli, M ^a   Paoloni, E ^a   Piemonte, C ^b   Rachevskaia, I ^c   Rama, M ^a   Ratti, L ^f   Re, V ^g   Rizzo, G ^a   Ronchin, S ^b   Rosso, V ^a   Simi, G ^a   Speziali, V ^f   Stefanini, A ^a   Zorzi, N ^b   more..

^a UNIVERSITY OF PISA   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF TRENTO   (Italy)

^e BEIJING NORMAL UNIVERSITY   (China)

^f UNIVERSITY OF PAVIA   (Italy)

^g UNIVERSITY OF BERGAMO   (Italy)

Author keywords

Bipolar junction transistors; Optoelectronics devices; Particle detectors

Indexed keywords

AMPLIFICATION; BIPOLAR TRANSISTORS; IONIZATION; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; PARTICLE DETECTORS; PHOSPHORUS; X RAYS;

BIPOLAR JUNCTION TRANSISTORS; IONIZING PARTICLES; THICK SILICON; TOTAL BASE CAPACITANCE;

PHOTOTRANSISTORS;

EID: 4243158380     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.05.055     Document Type: Conference Paper

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