High-gain bipolar detector on float-zone silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 3, 2003, Pages 572-577

  Han, D J ^a   Batignani, G ^b   Del Guerra, A ^b   Dalla Betta, G F ^c   Boscardin, M ^c   Bosisio, L ^d   Giorgi, M ^b   Forti, F ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF PISA   (Italy)

^c ITC IRST   (Italy)

^d UNIVERSITY OF TRIESTE   (Italy)

Author keywords

Bipolar detector; Bipolar junction transistor; Extrinsic gettering; Float zone silicon

Indexed keywords

CONTAMINATION; GAIN MEASUREMENT; RADIOACTIVE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BIPOLAR DETECTORS;

PARTICLE DETECTORS;

EID: 0141963386     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01947-8     Document Type: Article

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