Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150°C

Physica Scripta T

Volumn T126, Issue , 2006, Pages 85-88

  Park, Joong Hyun ^a   Han, Sang Myeon ^a   Park, Sang Geun ^a   Han, Min Koo ^a   Shin, Moon Young ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EXCIMER LASERS; INDUCTIVELY COUPLED PLASMA; NANOCRYSTALLINE SILICON; SUBSTRATES; THERMAL CONDUCTIVITY;

EXCIMER LASER ANNEALING (ELA); HYDROGEN ATOMS; LASER ENERGY DENSITY;

THIN FILM TRANSISTORS;

EID: 42349110335     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/020     Document Type: Conference Paper

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