Effects of molecular versus atomic oxygen on NiSi and Ni(Pt)Si films grown on both p - and n -doped Si(100)

Applied Physics Letters

Volumn 92, Issue 15, 2008, Pages

  Manandhar, Sudha ^a   Kelber, Jeffry ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FILM GROWTH; KINETICS; NICKEL COMPOUNDS; OXIDATION; PASSIVATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC OXYGEN; OXIDATION RATE; SUBSTRATE DOPANTS;

OXYGEN;

EID: 42349098893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2909574     Document Type: Article

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