Abnormal silicon oxide growth on cobalt silicide in arsenic-doped N+ active areas

Materials Letters

Volumn 57, Issue 22-23, 2003, Pages 3565-3569

  Lee, Won Gyu ^a   Sung, Nak Kyun ^b   Cho, Ihl Hyun ^b   Ryu, Hyuk Hyun ^b  

^a Kangwon National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Abnormal oxidation; Active area; Arsenic; CoSi2; Out diffusion

Indexed keywords

ARSENIC; COBALT COMPOUNDS; DEGRADATION; DIFFUSION; DOPING (ADDITIVES); HEAT TREATMENT; OXIDATION;

ACTIVE AREAS;

SILICON COMPOUNDS;

EID: 0038480672     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(03)00126-5     Document Type: Article

References (7)

1. Murarka S.P. Silicides for VLSI Applications. 1983;Academic Press, Orlando.
2. Tamazaki T., Goto K., Fukano T., Sugii Y., Ito T. Tech. Dig., Int. Electron Devices Meet. 906:1993.
3. Kim G.B., Kwak J.S., Baik H.K., Lee S.M. J. Appl. Phys. 85:1999;1503.
4. Detavernier C., Van Meirhaeghe R.L., Cardon F., Maex K., Bender H., Zhu S. J. Appl. Phys. 88:2000;133.
5. Mizuno T., Sawada S., Saitoh Y., Shinozaki S. Tech. Dig., Int. Electron Devices Meet. 234:1988.
6. d'Heurle B.M., Cros A., Frampton R.D., Irene E.A. Philos. Mag. 55:1987;291.
7. Maex K., Ghosh G., Delaey L., Probst V., Lippens P., Van den hove L., De Keersmaeker R.F. J. Mater. Res. 4:1989;1209.