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Thin Solid Films

Volumn 515, Issue 22, 2007, Pages 8102-8108

Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices

(3) Chi, D Z a Lee, R T P a Wong, A S W a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

Contact metallization; Films; Impurities; NiSi

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; IMPURITIES; METALLIZING; SENSITIVITY ANALYSIS; THERMODYNAMIC STABILITY;

CONTACT METALLIZATION; NICKEL MONOSILICIDE (NISI); RESIDUAL INTERFACIAL OXIDE; SURFACE CONTAMINANTS;

NICKEL COMPOUNDS;

EID: 34547775080 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2007.02.020 Document Type: Article

Times cited : (14)

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