Site-selective formation of Si nanocrystal in Si O2 by femtosecond laser irradiation and Al deoxidization effects

Applied Physics Letters

Volumn 92, Issue 15, 2008, Pages

  Uchida, Noriyuki ^a,d   Mikami, Youhei ^a   Kintoh, Hiroshi ^a   Murakami, Kouichi ^a   Fukata, Naoki ^b,c   Mitome, Masanori ^b   Hase, Muneaki ^a,b   Kitajima, Masahiro ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; FUSED SILICA; LASER BEAM EFFECTS; ULTRASHORT PULSES;

ALUMINUM THIN FILMS; DEOXIDIZATION EFFECTS; FEMTOSECOND LASER IRRADIATION; NANOREGIONS;

NANOCRYSTALLINE SILICON;

EID: 42349094258     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2905289     Document Type: Article

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