Synthesis of silicon nanocrystals in aluminum-doped SiO2 film by laser ablation method

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 38, Issue 1-2, 2007, Pages 31-35

  Uchida, Noriyuki ^a   Okami, Tsuyoshi ^a   Tagami, Hideo ^a   Fukata, Naoki ^b   Mitome, Masanori ^b   Bando, Yoshio ^b   Murakami, Kouichi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Aluminum doping; Electron spin resonance; Photoluminescence; Silicon nanocrystal dots

Indexed keywords

ALUMINUM; ANNEALING; DOPING (ADDITIVES); LASER ABLATION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; QUENCHING; SILICON; SYNTHESIS (CHEMICAL);

ALUMINUM DOPING; BLUESHIFT; SILICON NANOCRYSTAL DOTS;

NANOCRYSTALS;

EID: 34147183791     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.12.027     Document Type: Article

References (23)

1. Canhan L.T. Appl. Phys. Lett. 57 (1990) 1046
2. Wang L.-W., and Zunger A. J. Chem. Phys. 100 (1994) 2394
3. Takagi H., Ogawa H., Yamazaki Y., Ishizaki A., and Nakagiri T. Appl. Phys. Lett. 56 (1990) 2739
4. Schuppler S., Friedman S.L., Maucus M.A., Adler D.L., and Xie Y.-H. Phys. Rev. B 52 (1995) 4910
5. Takeda S., Toshikiyo K., Fujii M., Hayashi S., and Yamamoto K. Phys. Rev. B 61 (2000) 15988
6. Min K.S., Shcheglov K.V., Yang C.M., Atwater H.A., Brongersma M.L., and Polman A. Appl. Phys. Lett. 69 (1996) 2033
7. N. Fukata, et al., in preparation.
8. Wolkin M.V., Jorne J., Fauchet P.M., Allen G., and Delerue C. Phys. Rev. Lett. 82 (1999) 197
9. Biteen J.S., Lewis N.S., Atwater A., and Polman A. Appl. Phys. Lett. 84 (2004) 5389
10. Rong F.C., Harvey J.F., Poindexter E.H., and Gerardi G.J. Appl. Phys. Lett. 63 (1993) 920
11. Neufeld E., Wang S., Apetz P., Buchal Ch., Carius R., White C.W., and Thomas D.K. Thin Sol. Films 294 (1997) 238
12. Cheylan S., and Elliman R.G. Appl. Phys. Lett. 78 (2001) 1225
13. Fukata N., Li C., Morihiro H., Murakami K., Mitome M., and Bando Y. Appl. Phys. A 83 (2006) 395
14. Young C.F., Poindextor E.H., and Gerardi G.J. J. Appl. Phys. 81 (1997) 7468
15. Fujii M., Hayashi S., and Yamamoto K. J. Appl. Phys. 83 (1998) 7953
16. Fujii M., Mimura A., Hayashi S., Yanamoto Y., and Mirakami K. Phys. Rev. Lett. 89 (2002) 206805
17. Fujii M., Toshikiyo K., Takase Y., Yamaguchi Y., and Hayashi S. J. Appl. Phys. 94 (2003) 1990
18. Fujii M., Yanaguchi Y., Takase Y., Ninomiya K., and Hayashi S. Appl. Phys. Lett. 85 (2004) 1158
19. Fujii M., Yanaguchi Y., Takase Y., Ninomiya K., and Hayashi S. Appl. Phys. Lett. 87 (2005) 211919
20. Muramkami K., Suzuki T., Makimura T., and Tamura M. Appl. Phys. A 69 (1999) S13
21. Wolf H.F. Silicon Semiconductor Data. first ed. (1969), Pergamon Press p. 155
22. Skuja L. J. Non-Cryst. Solids 239 (1998) 16
23. Bardeleben H.J., Chamarno M., Grosman A., Morazzani V., Ortega C., Siejka J., and Ringo S. J. Lumin. 57 (1993) 319