Formation of microstructures on silicon surface in a fluorinated plasma via the cyclic etching-passivation process

High Energy Chemistry

Volumn 42, Issue 2, 2008, Pages 132-136

  Amirov, I I ^a   Alov, N V ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 42149169697     PISSN: 00181439     EISSN: 16083148     Source Type: Journal    
DOI: 10.1007/s10733-008-2013-9     Document Type: Article

References (17)

1. McAuley, S.A., Ashraf, H., Atabo, L., Chambers, A., Hall, S., Hopkins, J., and Nicholls, G., J. Phys., D: Appl. Phys., 2001, vol. 34, p. 2769.
2. Laermer, F. and Urban, A., Microelectron. Eng., 2003, vols. 67-68, p. 349.
3. Jansen, H., de Boer, M., and Ewenspoek, M., J. Micromech. Microeng., 1995, vol. 5, p. 115.
4. Dussart, R., Mellhaoui, X., Lefaucheux, P., Volatier, M., Socquet-Clere, Braut, P., and Ranson, P., J. Phys., D: Appl. Phys., 2005, vol. 38, p. 3395.
5. Amirov, I.I., Morozov, O.V., Kal'nov, V.A., and Orlikovskii, A.A., Mikrosist. Tekh., 2004, vol. 12, p. 15.
6. Chen K.-S. and Ayon A.A., Microelectromechan. Syst., 2002, vol. 11, no. 3, p. 264.
7. Kanechika, M., Sugimoto, N., and Mitsushima, Y., J. Vac. Sci. Technol., B, 2002, vol. 20, p. 1298.
8. Gharghi, M. and Sivoththaman, S., J. Vac. Sci. Technol., A, 2006, vol. 24, no. 3, p. 723.
9. Chang, C., Wang, Y., Kanamori, Y., Shin, J., Kawai, Y., Lee, C., Wu, K., and Esashi, M., J. Micromech. Microeng., 2005, vol. 15, p. 580.
10. Stubenrauch, M., Fischer, M., Kremin, C., Stoebenau, S., Albrecht, A., and Nagel, O., J. Micromech. Microeng., 2006, vol. 16, p. 82.
11. Amirov, I.I. and Alov, N.V., Khim. Vys. Energ., 2006, vol. 36, no. 4, p. 311 [High Energy Chem., 2006, vol. 36, no. 4, p. 267].
12. Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, Briggs, D. and Seach, M.P., Eds., Chichester: Wiley, 1983.
13. Methods of Surface Analysis, Czanderna, A.W., Ed., Amsterdam: Elsevier, 1975.
14. Maruyama, T., Fujiwara, N., Siozawa, K., and Yoneda, M., Jpn. J. Appl. Phys., 1996, vol. 35, no. 4B, p. 2463.
15. Takahashi, K. and Tachibana, K., J. Appl. Phys., 2001, vol. 89, no. 2, p. 893.
16. Laballe, C.B., Donnelly, V.M., Bogart, G.R., Opila, R.L., and Kornblit, A., J. Vac. Sci. Technol., A, 2004, vol. 22, no. 6, p. 2500.
17. Zheng, L., Ling, L., Hua, X., Oehrlein, G.S., and Hudson, E.A., J. Vac. Sci. Technol., A, 2005, vol. 23, no. 4, p. 634.