Nonuniform mobility-enhancement techniques and their impact on device performance

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 1050-1057

  Payet, Fabrice ^a   Beuf, Frédéric ^a   Ortolland, Claude ^b,c   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (France)

^c IMEC   (Belgium)

Author keywords

Contact etch stop layer (CESL); Mobility; Mobility enhancement; MOSFETs; SiN liner; Strained Si

Indexed keywords

CARRIER MOBILITY; DRAIN CURRENT; ETCHING; MATHEMATICAL MODELS;

CONTACT ETCH-STOP LAYER; MOBILITY ENHANCEMENT; PROCESS-INDUCED STRESS;

MOSFET DEVICES;

EID: 41949107199     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.917542     Document Type: Article

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