Post hard breakdown conduction in MOS capacitors with silicon and aluminum oxide as dielectric

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 366-368

  Avellan, Alejandro ^a   Jakschik, S ^a   Tippelt, B ^a   Kudelka, S ^a   Krautschneider, W ^b  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Current; Dielectric breakdown; MOS devices

Indexed keywords

ALUMINA; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM OXIDE; ATLAS SIMULATION; SCHOTTKY CONTACT; SILICON OXIDE;

MOS CAPACITORS;

EID: 41849102027     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917627     Document Type: Article

References (12)

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