Temperature dependence of the hard breakdown current of MOS capacitors

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 463-466

  Avellán, Alejandro ^a   Miranda, Enrique ^b   Sell, Ben ^c   Schroeder, Dietmar ^a   Krautschneider, Wolfgang ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC DEVICES;

BROKEN DOWN; HARD BREAKDOWN; I - V CURVE; LOW VOLTAGES; OXIDE THICKNESS; P-TYPE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

MOS CAPACITORS;

EID: 13444265187     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194968     Document Type: Conference Paper

References (4)

1. E. Miranda and J. Suñé, "Analytic modeling of leakage current through multiple breakdown paths in SiO2 films", International Reliability Physics Symposium, 2001, p. 367
2. M. S. Lang, C. Chang, Y. T. Yeow, C. Hu, and R. W. Brodersen, "Creation and termination of substrate deep depletion in thin oxide MOS capacitors by charge tunneling", IEEE Electron Device Letters, vol. 4, no. 10, 1983, p. 350
3. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley & Sons, 1982
4. D. Schroeder, Modelling of Interface Carrier Transport for Device Simulation, Springer, 1994