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Volumn 2, Issue , 2006, Pages 1650-1652

Preparation of nanocrystalline silicon carbide thin films by hot-wire chemical vapor deposition at various filament temperature

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; NANOCRYSTALLINE SILICON; SILICON CARBIDE; THERMAL EFFECTS; X RAY DIFFRACTION;

EID: 41749115469     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279805     Document Type: Conference Paper
Times cited : (2)

References (9)
  • 1
    • 0031206903 scopus 로고    scopus 로고
    • H. Matsumami, T. Kimoto, Mater, Step-controlled epitaxial of SiC: high quality homoepitaxy, Sci. Eng. R 20, 1997, pp. 125-166
    • H. Matsumami, T. Kimoto, Mater, "Step-controlled epitaxial of SiC: high quality homoepitaxy", Sci. Eng. R 20, 1997, pp. 125-166
  • 3
    • 0000775425 scopus 로고    scopus 로고
    • Formation of Silicon-based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method
    • H. Matsumura, "Formation of Silicon-based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method", Jpn. J. Appl. Phys., 37, 1998 pp. 3175-3187
    • (1998) Jpn. J. Appl. Phys , vol.37 , pp. 3175-3187
    • Matsumura, H.1
  • 5
    • 13744253789 scopus 로고    scopus 로고
    • Thin-Film Silicon - Growth Process and Solar Cell Application -
    • A. Matsuda, "Thin-Film Silicon - Growth Process and Solar Cell Application -", Jpn. J. Appl. Phys., 43, 2004 pp. 7909-7920
    • (2004) Jpn. J. Appl. Phys , vol.43 , pp. 7909-7920
    • Matsuda, A.1
  • 7
    • 0020940620 scopus 로고
    • Determination of the thickness and optical constants of amorphous silicon
    • R. Swanepole, "Determination of the thickness and optical constants of amorphous silicon", J. Phys. E: Sci. Instrum., 16, 1983, pp. 1214-1222.
    • (1983) J. Phys. E: Sci. Instrum , vol.16 , pp. 1214-1222
    • Swanepole, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.