메뉴 건너뛰기




Volumn 1, Issue , 2006, Pages 885-889

Dielectric rear surface passivation for industrial multicrystalline silicon solar cells

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; OXIDES; PHOTOLITHOGRAPHY; SILICON COMPOUNDS;

EID: 41749096352     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279598     Document Type: Conference Paper
Times cited : (5)

References (10)
  • 1
    • 0033364929 scopus 로고    scopus 로고
    • 24-5% Efficiency silicon PERT cells on MCZ substrates and 24-7% efficiency PERL cells on FZ substrates
    • J. Zhao, A. Wang, M. A. Green, "24-5% Efficiency silicon PERT cells on MCZ substrates and 24-7% efficiency PERL cells on FZ substrates", Progr. Photovolt. 7, 1999, pp. 471-474.
    • (1999) Progr. Photovolt , vol.7 , pp. 471-474
    • Zhao, J.1    Wang, A.2    Green, M.A.3
  • 2
    • 6044223440 scopus 로고    scopus 로고
    • Multicrystalline Silicon Solar Cells Exceeding 20% Efficiency
    • O. Schultz, S. W. Glunz, G. Willeke, "Multicrystalline Silicon Solar Cells Exceeding 20% Efficiency", Progr. Photovolt. 12, 2004, pp. 553-558.
    • (2004) Progr. Photovolt , vol.12 , pp. 553-558
    • Schultz, O.1    Glunz, S.W.2    Willeke, G.3
  • 8
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data", Appl. Phys. Lett. 69, 1996, pp. 2510-2512.
    • (1996) Appl. Phys. Lett , vol.69 , pp. 2510-2512
    • Sinton, R.A.1    Cuevas, A.2
  • 9
    • 0036605313 scopus 로고    scopus 로고
    • Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
    • S. Dauwe, L. Mittelstadt, A. Metz, R. Hezel, "Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells", Progr. Photovolt. 10, 2002, pp. 271-278.
    • (2002) Progr. Photovolt , vol.10 , pp. 271-278
    • Dauwe, S.1    Mittelstadt, L.2    Metz, A.3    Hezel, R.4
  • 10
    • 33750460407 scopus 로고    scopus 로고
    • Comparison of different dielectric passivation layers for application in industrially feasible high-efficiency crystalline silicon solar cells
    • S. W. Glunz, A. Grohe, M. Hermle, M. Hofmann, S. Janz et al., "Comparison of different dielectric passivation layers for application in industrially feasible high-efficiency crystalline silicon solar cells", Proceedings of the 20th European Photovoltaic Solar Energy Conference, 2005, pp. 572-577.
    • (2005) Proceedings of the 20th European Photovoltaic Solar Energy Conference , pp. 572-577
    • Glunz, S.W.1    Grohe, A.2    Hermle, M.3    Hofmann, M.4    Janz, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.