Nanoscale epitaxial cobalt salicide bitlines for charge trapping memory cells

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Kleint, C A ^a   Mueller, T ^a   Teichert, S ^a   Fitz, C ^a   Nagel, N ^a   Kuesters, K H ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ELECTRON INJECTION; EPITAXIAL GROWTH; FLASH MEMORY; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE TRAPPING MEMORY CELLS; NANOSCALE EPITAXIAL COBALT SALICIDE BITLINES;

POLYCRYSTALLINE MATERIALS;

EID: 41649092285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2906366     Document Type: Article

References (12)

1. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, IEEE Electron Device Lett. 21, 543 (2000).
2. N. Nagel, T. Müller, M. Isler, V. Pissors, J.-U. Sachse, D. Manger, D. Caspary, S. Parascandola, D. Olligs, H. Boubekeur, F. Heinrichsdorff, L. Bach, V. Polei, J. Gupta, D. Pritchard, S. Riedel, M. Strassburg, J. Deppe, U. Bewersdorff-Sarlette, M. Verhoeven, L. Lattard, M. Markert, E. Ruttkowski, R. Mikalo, J. Willer, N. Schulze, C. Ludwig, E. G. Stein von Kamienski, T. Mikolajick, K. H. Kuesters, A. Shappir, Y. Shur, E. Lusky, and B. Eitan, Proceedings of 2005 Symposium on VLSI-TSA Technology., VLSI Technology Dig., (IEEE, New York, 2007), pp. 90-91.
3. T. Müller, C. Kleint, C. Fitz, M. Isler, S. Riedel, J.-U. Sachse, D. Olligs, H. Boubekeur, F. Heinrichsdorff, V. Polei, D. Pritchard, L. Lattard, M. Markert, C. Schupke, B. Tippelt, S. Teichert, R. Reisdorf, C. Ludwig, E. Stein von Kamienski, T. Mikolajick, and N. Nagel, MRS Symposia Proceedings No. 997 (Materials Research Society Pittsburgh 2007), p. 0997-I02-10.
4. N. Nagel, D. Olligs, V. Polei, S. Parascandola, H. Boubekeur, L. Bach, T. Mueller, M. Strassburg, S. Riedel, P. Kratzert, D. Caspary, J. Deppe, J. Willer, N. Schulze, T. Mikolajick, K. H. Kuesters, A. Shappir, E. Redmand, I. Bloom, and B. Eitan, Proceedings of the 2005 Symposium on VLSI-TSA Technology., Tech. Dig. VLSI Symp. (IEEE, New York, 2005), pp. 120-121.
5. J. A. Kittl, D. A. Prinslow, P. P. Apte, and M. F. Pas, Appl. Phys. Lett. 67, 2308 (1995).
6. M. J. H. van Dal, D. Jawarani, J. G. M. van Berkum, M. Kaiser, J. A. Kittl, C. Vrancken, M. De Potter, A. Lauwers, and K. Maex, J. Appl. Phys. 96, 7568 (2004).
7. M. L. A. Dass, D. B. Fraser, and C. S. Wei, Appl. Phys. Lett. 58, 1308 (1991).
8. J. J. Sun, J. Y. Tsai, and C. M. Osburn, IEEE Trans. Electron Devices 45, 1946 (1998).
9. S. L. Hsia, T. Y. Tan, P. Smith, and G. E. McGuire, J. Appl. Phys. 72, 1864 (1992).
10. Z. G. Xiao, G. A. Rozgonyi, C. A. Canovai, and C. M. Osburn, MRS Symposia Proceedings No. 202 (Materials Research Society Pittsburgh 1991), p. 101.
11. D. K. Sohn, J. S. Park, and J. W. Park, J. Electrochem. Soc. 147, 373 (2000).
12. C. Y. Chang, Y. K. Fang, and S. M. Sze, Solid-State Electron. 14, 541 (1971).