Elevated n+/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1946-1952

  Sun, Jie J ^a   Tsai, Jiunn Yann ^b,c   Osburn, Carlton M ^a  

^a North Carolina State University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

Elevated source drain; Selective epitaxy; Shallow junctions; Suicide

Indexed keywords

ARSENIC; COBALT COMPOUNDS; COMPUTER SIMULATION; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ELEVATED SOURCE DRAIN; SELECTIVE EPITAXY; SHALLOW JUNCTIONS;

MOSFET DEVICES;

EID: 0032166533     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711360     Document Type: Article

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