Highly scalable 90nm STI bounded Twin Flash™ cell with local interconnect

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 120-121

  Nagel, N ^a   Olligs, D ^a   Polei, V ^a   Parascandola, S ^a   Boubekeur, H ^a   Bach, L ^a   Muller T ^a   Strassburg, M ^a   Riedel, S ^a   Kratzert, P ^a   Caspary, D ^a   Deppe, J ^a   Willer, J ^a   Schulze, N ^a   Mikolajick, T ^a   Kusters K H ^a   Shappir, A ^b   Redmard, E ^b   Bloom, I ^b   Eitan, B ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Saifun Semiconductors Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CODES (SYMBOLS); NANOTECHNOLOGY; RANDOM ACCESS STORAGE;

BOUNDED CELL; LOCAL INTERCONNECT (LI); SHALLOW TRENCH ISOLATION (STI); TWIN FLASH MEMORY CELL;

FLASH MEMORY;

EID: 33745140536     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469236     Document Type: Conference Paper

References (3)

1. B. Eitan et. al.: Proc. SSDM 99, Tokyo, Japan, pp. 522 (1999)
2. J. Willeret, al.: VLSI Technology, pp. 76 (2004)
3. J. Amon et. al.: IEDM Tech. Dig., pp. 73 (2004)