Tuning of intraband absorption and photoresponse in self-assembled InAsGaAs quantum dots by thermal annealing

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Ng, W H ^a   Zibik, E A ^a   Wilson, L R ^a   Skolnick, M S ^a   Cockburn, J W ^a   Steer, M J ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Engineering and Physical Sciences Research Council UK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; ANNEALING; ELECTRON TRANSITIONS; PHOTOCURRENTS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON TRANSITION ENERGIES; INTERSUBLEVEL TRANSITIONS; INTRABAND ABSORPTION; PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41549125963     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2875242     Document Type: Article

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