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Volumn 2, Issue 7, 2005, Pages 2058-2061
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Growth and characterization of thick GaN layers with high Fe doping
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY;
IRON;
METALLORGANIC VAPOR PHASE EPITAXY;
PARTIAL PRESSURE;
REACTION KINETICS;
SEMICONDUCTOR DOPING;
TEMPERATURE DISTRIBUTION;
DONOR IMPURITIES;
FERROCENE;
METALORGANIC HYDROGEN CHLORIDE VAPOR PHASE EPITAXY (MOHVPE);
ROOM-TEMPERATURE RESISTIVITY;
GALLIUM NITRIDE;
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EID: 27344448866
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461410 Document Type: Conference Paper |
Times cited : (6)
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References (11)
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