High density plasma FSG charging damage

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4182, Issue 1, 2000, Pages 151-158

  Ang, T C ^a   Tse, M S ^b   Loong, S Y ^a   Wong, Y C ^a   Loh, W B ^a  

^a Chartered Semiconductor Manufacturing   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Antenna ratios; Antenna test structures; Area intensive; Edge intensive; Gate leakage; Plasma induced charging damage; Threshold voltage shift

Indexed keywords

LEAKAGE CURRENTS; MOS DEVICES; PLASMAS;

ANTENNA RATIOS; FLUORINATED SILICATE GLASS (FSG); GATE LEAKAGE; HIGH DENSITY PLASMA (HDP); UNDOPED SILICATE GLASS (USG);

GATES (TRANSISTOR);

EID: 0034538737     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.410073     Document Type: Article

References (0)