Performances of Si nanocrystal memories obtained by by CVD and their potentialities to further scaling of non-volatile memories

2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2004, Pages 37-43

  Gerardi, C ^a   Desalvo, B ^b   Lombardo, S ^c   Baron, Th ^d  

^a STMICROELECTRONICS   (Italy)

^b CEA LETI   (France)

^c CNR IMM   (Italy)

^d CNRS CPMA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; FLASH MEMORY; MACHINE DESIGN; NAND CIRCUITS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTAL DEPOSITION; NON-VOLATILE MEMORIES;

NONVOLATILE STORAGE;

EID: 4143124521     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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