Enhanced crystallization of amorphous Si containing hydrogen without oxygen during ion-beam irradiation at 310 °C and during furnace annealing below 450 °C

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5433-5445

  Nakata, Jyoji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143120229     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366459     Document Type: Article

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