Investigation of defect concentration in implanted silicon substrates by hdydrogen decoration

Journal of the Electrochemical Society

Volumn 143, Issue 12, 1996, Pages 4101-4105

  Saito, Kazuyuki ^a   Sato, Yoshiyuki ^b   Yabumoto, Norikuni ^b,c   Homma, Yoshikazu ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b NTT CORPORATION   (Japan)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; HYDROGEN; HYDROGEN BONDS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY;

AMORPHOUS CRYSTALLINE SILICON BOUNDARY; BROKEN BOND DEFECTS; HYDROGEN INTENSITY; THERMAL DESORPTION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0030398471     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837343     Document Type: Article

References (13)

1. L. Csepregi, J. W. Mayer, and T. W. Sigmon, Appl. Phys. Lett., 29, 92 (1976).
2. A. Battaglia and S. U. Campisano, J. Appl. Phys., 74, 6068 (1993).
3. J. Boussey-Said, G. Ghibaudo, I. Stoemenos, and P. Zaumseil, J. Appl. Phys., 72, 61 (1992).
4. K. Saito, Y. Sato, N. Yabumoto, and Y. Homma, Jpn. J. Appl. Phys., To be published.
5. J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics, Semiconductors and Related Materials, Halsted Press, New York (1975).
6. H. F. Wolf, Silicon Semiconductor Data, pp. 137, Pergamon Press, Oxford (1969).
7. D. K. Brice, J. Appl. Phys., 46, 3385 (1975).
8. K. S. Jones and G. A. Rozgoni, in Rapid Thermal Processing, Science and Technology, R. B. Fair, Editor, Chap. 5, Academic Press, Boston (1993).
9. K. S. Jones and G. A. Rozgoni, ibid., p. 132.
10. T. Hirao et al., J. Appl. Phys., 60, 5251 (1979).
11. L. A. Christel, J. F. Gibbons, and S. Mylroie, Nucl. Instrum. Methods, 182/183, 187 (1981).
12. N. Yabumoto, K. Saito, M. Morita, and T. Ohmi, Jpn. J. Appl. Phys., 30, L419 (1991).
13. M. Liehr, J. Vac. Sci. Technol., A8, 1939 (1990).