Application of thermal desorption spectroscopy to the study of defects induced by arsenic implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 589-590

  Saito, Kazuyuki ^a   Sato, Yoshiyuki ^b   Yabumoto, Norikuni ^b   Homma, Yoshikazu ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Arsenic implantation; Hydrogen adsorption; Implanted defect; Recrystallization; Silicon; Thermal desorption spectroscopy

Indexed keywords

ADSORPTION; ANNEALING; ARSENIC; CRYSTAL DEFECTS; DESORPTION; HYDROGEN; ION IMPLANTATION; RECRYSTALLIZATION (METALLURGY); SINGLE CRYSTALS; SPECTROSCOPY; SUBSTRATES;

ARSENIC IMPLANTATION; HYDROGEN ADSORPTION; IMPLANTATION INDUCED DEFECTS; THERMAL DESORPTION SPECTROSCOPY;

SILICON WAFERS;

EID: 0030087295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.589     Document Type: Article

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