Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 29-32

  Steinegger, Th ^a   Grundig Wendrock B ^d   Baeumler, M ^b   Jurisch, M ^c   Jantz, W ^b   Niklas, J R ^d  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

^d TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Microwave absorption; Photoluminescence; PICTS; SI Gallium Arsenide

Indexed keywords

DEFECTS; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE ABSORPTION; MICROWAVES; PHOTOLUMINESCENCE;

PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); PHOTOLUMINESCENCE TOPOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037197416     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00959-X     Document Type: Conference Paper

References (8)