Comparison of light emission from room temperature light emitting diodes with InAs active regions grown by LPE

IEE Proceedings: Optoelectronics

Volumn 144, Issue 5, 1997, Pages 287-294

  Krier, A ^a   Fisher, M ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

InAs active regions; Light emission; Light emitting diodes

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

HONOEPITAXIAL DIODES;

LIGHT EMITTING DIODES;

EID: 0031244999     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971325     Document Type: Article

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