Low threshold current density 1.3μm metamorphic InGaAs/GaAs quantum well laser diodes

Electronics Letters

Volumn 44, Issue 7, 2008, Pages 474-475

  Wu, D ^a   Wang, H ^a   Wu, B ^a   Ni, H ^a   Huang, S ^a   Xiong, Y ^a   Wang, P ^a   Han, Q ^a   Niu, Z ^a   Tangring I ^b   Wang, S M ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD CURRENT DENSITY; THRESHOLD VOLTAGE;

CONTINUOUS-WAVE OPERATION; INGAAS METAMORPHIC BUFFERS;

SEMICONDUCTOR LASERS;

EID: 41149159274     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080106     Document Type: Article

References (9)

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