Low temperature bonding of PECVD silicon dioxide layers

ECS Transactions

Volumn 3, Issue 6, 2006, Pages 165-173

  Baine, P T ^a   Bain, M ^a   McNeill, D W ^a   Gamble, H S ^a   Armstrong, B M ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT TRANSFER; LAYER TRANSFER; LOW TEMPERATURE BONDING;

ANNEALING; BOND STRENGTH (CHEMICAL); LAYERED MANUFACTURING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

SILICA;

EID: 34249073156     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357066     Document Type: Conference Paper

References (9)

1. A. Fan, A. Rahman, and R. Reif, Electrochem. Solid-State Lett., 2, 534 (1999).
2. P. Baine, M. Jin, H.S. Gamble, B.M. Armstrong, D. Linton and F. Mohammed Solid-State Electronics, Vol. 49, No 9, 1461 (2005).
3. M. Bain, M. Jin, S. Loh , B M Armstrong, H S Gamble and D W McNeill, Electron Dev Lett., Vol 26, No. 2, 72 (2005).
4. S.K. Kim, L. Xue and S. Tiwari 2004 IEEE International SOI Conference, 136 (2004).
5. B. Aspar, C. Lagahe-Blanchard and H. Moricea, ECS Conference 2005: Wafer Bonding Symposium, Quebec, Spring 2005.
6. C.S. Tan, K.M. Chen, A. Fan and R. Reif, Electrochem. Solid-State Lett., 8, G1-G4 (2005).
7. C.S. Tan, N. Chen, A. Fan and R. Reif, Applied Phys. Lett., Vol. 82, No. 16, 2649 (2003).
8. J. D. Plummer, M.D. Deal and P.B. Griffin, Silicon VLSI Technology, p. 527, Prentice-Hall, New Jersey (2000).
9. W.P. Maszara, G. Goetz, A. Cavaiglla and J.B. McKitterick, J. Appl. Phys, 64, (10) 4943 (1968)