Characterization of epiready n+-GaAs (100) surfaces by SPV-transient

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6800, Issue , 2008, Pages

  Sinkkonen, Juha ^a   Novikov, Sergey ^a   Varpula, Aapo ^a   Haapamaa, J ^b  

^a AALTO UNIVERSITY   (Finland)

^b Coherent Finland Oy ^*  (Finland)

Author keywords

Kelvin probe; Slow traps; Surface photovoltage transient; Tunneling assisted trapping

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRAPPING; ELECTRONIC STATES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SILICON WAFERS;

KELVIN PROBE; SURFACE PHOTOVOLTAGE TRANSIENT (SPV); TUNNELING ASSISTED TRAPPING;

TRANSIENTS;

EID: 41149118633     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.759378     Document Type: Conference Paper

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