Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Lo, F Y ^a   Melnikov, A ^a   Reuter, D ^a   Cordier, Y ^b   Wieck, A D ^a,b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FOCUSED ION BEAMS; GALLIUM NITRIDE; HALL EFFECT; HETEROJUNCTIONS; ION IMPLANTATION; MAGNETORESISTANCE;

ANISOTROPIC MAGNETORESISTANCE; ROOM TEMPERATURE; WURTZITE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41049109166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2899968     Document Type: Article

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