Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 1033-1036

  Nakanishi, Y ^a   Wakahara, A ^a   Okada, H ^a   Yoshida, A ^a   Ohshima, T ^b   Itoh, H ^b   Nakao, S ^c   Saito, K ^c   Kim, Y T ^d  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

Eu; GaN; Ion implantation; Photoluminescence; RBS channeling

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ION IMPLANTATION; PHOTOLUMINESCENCE; QUENCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

NEAR-BAND-EDGE EMISSIONS;

GALLIUM NITRIDE;

EID: 0038412636     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00928-5     Document Type: Conference Paper

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