Realization of intrinsic p-Type ZnO thin films by metal organic chemical vapor deposition

Journal of Electronic Materials

Volumn 34, Issue 8, 2005, Pages 1172-1176

  Tan, S T ^a,c   Chen, B J ^a   Sun, X W ^a   Yu, M B ^b   Zhang, X H ^c   Chua, S J ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Metal organic chemical vapor deposition (MOCVD); P type ZnO; ZnO thin films

Indexed keywords

CARRIER CONCENTRATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAMPLING; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

NEAR-BAND-EDGE EMISSION; P-TYPE ZNO; TRANSMITTANCE; ZNO THIN FILMS;

ZINC OXIDE;

EID: 24144433522     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0247-6     Document Type: Article

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