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Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

Room temperature photoluminescence from the amorphous Si structure generated under keV Ar-ion-induced surface rippling condition

(4) Chini, T K a Datta, D P a Facsko, S b Mucklich A b

a SAHA INSTITUTE OF NUCLEAR PHYSICS (India)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL STRUCTURE; INFRARED RADIATION; ION BOMBARDMENT; PHOTOLUMINESCENCE; SURFACE PHENOMENA;

DRASTIC REDUCTION; ROOM TEMPERATURE;

AMORPHOUS SILICON;

EID: 40849150765 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2896644 Document Type: Article

Times cited : (22)

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