Determination of injection barriers in organic semiconductor devices from capacitance measurements

Physical Review Letters

Volumn 100, Issue 8, 2008, Pages

  Van Mensfoort, S L M ^a,b   Coehoorn, R ^a,b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT DENSITY; ENERGY BARRIERS; SEMICONDUCTING ORGANIC COMPOUNDS;

BUILT-IN VOLTAGE; INJECTION BARRIERS; POLYFLUORENE;

SEMICONDUCTOR DEVICES;

EID: 40849113329     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.086802     Document Type: Article

References (20)

1. T.D. Anthopoulos, D.M. de Leeuw, E. Cantatore, S. Setayesh, E.J. Meijer, C. Tanase, J.C. Hummelen, and P.W.M. Blom, Appl. Phys. Lett. 85, 4205 (2004). APPLAB 0003-6951 10.1063/1.1812577
2. C. Wang, J.P. Snyder, and J.R. Tucker, Appl. Phys. Lett. 74, 1174 (1999); APPLAB 0003-6951 10.1063/1.123477
3. M. Dubois, D. Jimnez, P.L. de Andres, and S. Roche, Phys. Rev. B PRBMDO 0163-1829 76, 115337 (2007). 10.1103/PhysRevB.76.115337
4. I.D. Parker, J. Appl. Phys. 75, 1656 (1994). JAPIAU 0021-8979 10.1063/1.356350
5. L. Chua, J. Zaumzeil, J. Chang, E.-W. Ou, P.-H. Ho, H. Sirringhaus, and R. Friend, Nature (London) NATUAS 0028-0836 434, 194 (2005). 10.1038/nature03376
6. A. Kahn, N. Koch, and W. Gao, J. Polym. Sci. B JPLPAY 0887-6266 41, 2529 (2003). 10.1002/polb.10642
7. C. Tengstedt, W. Osikowicz, W. Salaneck, I.D. Parker, C.-H. Hsu, and M. Fahlman, Appl. Phys. Lett. 88, 053502 (2006). APPLAB 0003-6951 10.1063/1.2168515
8. M. Kemerink, J.M. Kramer, H.H.P. Gommans, and R.A.J. Janssen, Appl. Phys. Lett. 88, 192108 (2006). APPLAB 0003-6951 10.1063/1.2205007
9. I.H. Campbell, T.W. Hagler, D.L. Smith, and J.P. Ferraris, Phys. Rev. Lett. 76, 1900 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.76.1900
10. A. van Dijken, Org. Electron. 1566-1199 4, 131 (2003); 10.1016/j.orgel.2003.08.007
11. I.N. Hulea, Appl. Phys. Lett. 83, 1246 (2003). APPLAB 0003-6951 10.1063/1.1600850
12. R. Coehoorn, S.I.E. Vulto, S.L.M. van Mensfoort, J. Billen, M. Bartyzel, H. Greiner, and R. Assent, Proc. SPIE-Int. Soc. Opt. Eng. PSISDG 0277-786X 6192, 61920O (2006). 10.1117/12.663096
13. J.C. Scott and G.G. Malliaras, Chem. Phys. Lett. 299, 115 (1999); CHPLBC 0009-2614 10.1016/S0009-2614(98)01277-9
14. V.I. Arkhipov, E.V. Emelianova, Y.H. Tak, and H. Bssler, J. Appl. Phys. 84, 848 (1998). JAPIAU 0021-8979 10.1063/1.368146
15. W.F. Pasveer, J. Cottaar, C. Tanase, R. Coehoorn, P.A. Bobbert, P.W.M. Blom, D.M. de Leeuw, and M.A.J. Michels, Phys. Rev. Lett. 94, 206601 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.94.206601
16. J. Shao and G.T. Wright, Solid-State Electron. SSELA5 0038-1101 3, 291 (1961). 10.1016/0038-1101(61)90011-9
17. R. de Levie and H. Moreira, J. Membr. Biol. JMBBBO 0022-2631 9, 241 (1972); 10.1007/BF01868055
18. R. de Levie, N.G. Seidah, and H. Moreira J. Membr. Biol. JMBBBO 0022-2631 10, 171 (1972). 10.1007/BF01867852
19. V.D. Mihailetchi, P.W.M. Blom, J.C. Hummelen, and M.T. Rispens, J. Appl. Phys. 94, 6849 (2003). JAPIAU 0021-8979 10.1063/1.1620683
20. S.L.M. van Mensfoort (unpublished).