Temperature-dependent built-in potential in organic semiconductor devices

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Kemerink, M ^a   Kramer, J M ^a   Gommans, H H P ^a   Janssen, R A J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DIFFUSION; ELECTRIC CURRENTS; LITHIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL EFFECTS;

ANALYTICAL MODEL; CHARGE DENSITY; ORGANIC SEMICONDUCTOR DEVICES; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DEVICES;

EID: 33646706564     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2205007     Document Type: Article

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10. Any systematic errors made by taking V0 as indicative of Vbi will most likely not influence the extracted T dependence. In PV devices, also Voc can be taken, which, however, has the disadvantage that significant photogenerated space charges may be present in the device, see, e.g., L. J. A. Koster, E. C. P. Smits, V. D. Mihailetchi, and P. W. M. Blom, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.085205 72, 085205 (2005); H. H. P. Gommans, M. Kemerink, J. M. A. Kramer, and R. A. J. Janssen, Appl. Phys. Lett. 87, 122104 (2005).
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