Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

Journal of Non-Crystalline Solids

Volumn 354, Issue 18, 2008, Pages 1976-1980

  Mahmoud, S T ^a   Ghamlouche, H ^a   Qamhieh, N ^a   Ahmed, Sadiqa ^a  

^a UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

Author keywords

Alloys; Amorphous semiconductors; Chalcogenides; Crystallization; Electrical and electronic properties; Films and coatings; Glass transition

Indexed keywords

AMORPHOUS SEMICONDUCTORS; BIAS VOLTAGE; CAPACITANCE MEASUREMENT; CHALCOGENIDES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; GLASS TRANSITION; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS;

THIN FILMS;

EID: 40649110717     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.11.014     Document Type: Article

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