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Volumn 39, Issue 3-4, 2008, Pages 507-511

Porous SiC layers on Si nanowire surface

Author keywords

Carbonization; Porous Si; Porous SiC; Raman scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; CHARACTERIZATION; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; POROUS SILICON; RAMAN SCATTERING; SILICON CARBIDE; SURFACE MORPHOLOGY;

EID: 40649089454     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.069     Document Type: Article
Times cited : (6)

References (17)
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  • 2
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    • Bulk crystal growth, epitaxy, and defect reduction in silicon carbide materials for microwave and power devices
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    • (2005) MRS Bull. , vol.30 , pp. 280
    • Sumakeris, J.J.1    Jenny, J.R.2    Powell, A.R.3
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    • Plasma assisted molecular beam epitaxy of GaN on porous SiC substrate with varying porosity
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    • Sagar, A.1    Feenstra, R.M.2    Inoki, C.K.3    Kuan, T.S.4    Lee, C.D.5
  • 7
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    • A. Syrkin, V. Dmitriev, V. Soukhoveev, M. Mynbaeva, R. Kakanakov, C. Hallin. E. Janzen, in: Proceedings of the International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, Mater. Sci. Forum 457 (2004).
    • A. Syrkin, V. Dmitriev, V. Soukhoveev, M. Mynbaeva, R. Kakanakov, C. Hallin. E. Janzen, in: Proceedings of the International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, Mater. Sci. Forum 457 (2004).
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    • Raman scattering from the surface phonon mode in GaP microcrystals
    • Hayashi S., and Kanamori H. Raman scattering from the surface phonon mode in GaP microcrystals. Phys. Rev. B 26 (1982) 7079-7082
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    • Hayashi, S.1    Kanamori, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.