Reduced structural defect densities in a-plane GaN layers on r-plane sapphire through buffer layer engineering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2524-2527

  Armitage, R ^a,b   Hirayama, H ^b   Kondo, Y ^a,b  

^a PANASONIC CORPORATION   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BUFFER LAYER STRUCTURES; GAN EPILAYERS; GAN LAYERS; NITRIDE SEMICONDUCTORS; NON-POLAR; NUCLEATION LAYER; PLANE SAPPHIRE; STRUCTURAL DEFECTS; VAPOUR PHASE EPITAXY;

BUFFER LAYERS; CORUNDUM; CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL WAVEGUIDES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; TECHNOLOGY;

GALLIUM ALLOYS;

EID: 40549139188     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674777     Document Type: Conference Paper

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