메뉴 건너뛰기




Volumn 39, Issue 2, 2003, Pages 219-232

Optical characterization of the recombination process in silicon wafers, epilayers and devices

Author keywords

[No Author keywords available]

Indexed keywords

PARTICLE BEAM INJECTION; POLYSILICON; SEMICONDUCTOR MATERIALS; SILICON WAFERS; THERMAL CYCLING;

EID: 0037411972     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0143-8166(01)00108-7     Document Type: Article
Times cited : (3)

References (16)
  • 6
    • 0000066852 scopus 로고
    • Sensitivity and transient response of microwave reflection measurements
    • Schofthaler M., Brendel R. Sensitivity and transient response of microwave reflection measurements. J Appl Phys. 77(7):1995;3162-3173.
    • (1995) J Appl Phys , vol.77 , Issue.7 , pp. 3162-3173
    • Schofthaler, M.1    Brendel, R.2
  • 7
    • 0000020111 scopus 로고    scopus 로고
    • Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
    • Schmidt J., Aberle A.J. Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers. J Appl Phys. 81:1997;6186.
    • (1997) J Appl Phys , vol.81 , pp. 6186
    • Schmidt, J.1    Aberle, A.J.2
  • 8
    • 0011580182 scopus 로고
    • Separate contactless measurement of the bulk lifetime and the surface recombination velocity by the harmonic generation of the excess carriers
    • Otaredian T. Separate contactless measurement of the bulk lifetime and the surface recombination velocity by the harmonic generation of the excess carriers. Solid-State Electron. 36:1993;2.
    • (1993) Solid-State Electron , vol.36 , pp. 2
    • Otaredian, T.1
  • 9
    • 0027683785 scopus 로고
    • Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level
    • Breglio G., Cutolo A., Spirito P., Zeni L. Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level. IEEE Electron Device Lett 1993;14.
    • (1993) IEEE Electron Device Lett , pp. 14
    • Breglio, G.1    Cutolo, A.2    Spirito, P.3    Zeni, L.4
  • 10
    • 0030211834 scopus 로고    scopus 로고
    • Contactless characterization of the recombination process in silicon wafers: Separation between bulk and surface contributions
    • Bernini R., Cutolo A., Irace A., Spirito P., Zeni L. Contactless characterization of the recombination process in silicon wafers. separation between bulk and surface contributions Solid-State Electron. 39:1996;1165.
    • (1996) Solid-State Electron , vol.39 , pp. 1165
    • Bernini, R.1    Cutolo, A.2    Irace, A.3    Spirito, P.4    Zeni, L.5
  • 11
    • 0032090677 scopus 로고    scopus 로고
    • An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system
    • Cutolo A., Daliento S., Sanseverino A., Vitale G.F., Zeni L. An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system. Solid-State Electron. 42(6):1998;1035-1038.
    • (1998) Solid-State Electron , vol.42 , Issue.6 , pp. 1035-1038
    • Cutolo, A.1    Daliento, S.2    Sanseverino, A.3    Vitale, G.F.4    Zeni, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.