Radiative and Auger recombination in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 357-359

  Jin, S R ^a   Sweeney, S J ^a   Ahmad, C N ^a   Adams, A R ^a   Murdin, B N ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BAND STRUCTURE; CARRIER CONCENTRATION; CRYOSTATS; HAMILTONIANS; HEATING; HETEROJUNCTIONS; HIGH PRESSURE EFFECTS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES;

AUGER RECOMBINATION (AR); LATTICE MISMATCH; ROOM TEMPERATURE (RT); THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 4043096844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772871     Document Type: Article

References (18)

1. N. K. Dutta and R. J. Nelson, Appl. Phys. Lett. 38, 407 (1981).
2. G. Fuchs, C. Schiedel, A. Hangleiter, V. Härle, and F. Scholz, Appl. Phys. Lett. 62, 396 (1993).
3. A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, Jpn. J. Appl. Phys. 19, L621 (1980).
4. S. Seki, H. Oohashi, H. Sugiura, T. Hirono, and K. Yokoyama, IEEE J. Quantum Electron. 32, 1478 (1996).
5. J. O'Gorman, A. F. J. Levi, T. Tanbun-Ek, D. L. Coblentz, and R. A. Logan, Appl. Phys. Lett. 60, 1058 (1992).
6. D. A. Ackerman, G. E. Shtengel, M. S. Hybertsen, P. A. Morton, R. F. Kazarinov, T. Tanbun-Ek, and R. A. Logan, IEEE J. Sci. Top. Quantum Electron, 1, 250 (1995).
7. Y. Zhou, J. S. Osinski, P. Grodzinski, P. D. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford, Appl. Phys. Lett. 62, 175 (1993).
8. H. Kurakake, T. Uchida, T. Yamamoto, T. Higashi, S. Ogita, and M. Kobayashi, IEEE J. Sci. Top. Quantum Electron. 3, 632 (1997).
9. T. R. Chen, B. Chang, L. C. Chiu, K. L. Yu, S. Margali, and A. Yariv, Appl. Phys. Lett. 43, 217 (1983).
10. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, IEEE J. Quantum Electron. 30, 477 (1994).
11. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
12. M. Allovon and M. Quillec, IEE Proc.-J: Optoelectron. 139, 148 (1992).
13. G. P. Agrawal and N. K. Dutta, in Semiconductor Lasers, 2nd ed. (Van Nostrand Reinhold, New York, 1993), p. 56.
14. A. R. Adams, M. Silver, and J. Allam, in Semiconductors and Semimetals edited by R. K. Willardson and E. R. Weber (Academic, New York, 1998), Vol. 55, pp. 313, 322.
15. S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O'Reilly, and P. J. A. Thijs, IEEE Photonics Technol. Lett. 10, 1076 (1998); A. F. Phillips, S. J. Sweeney, A. R. Adams, and P. J.A. Thijs, IEEE J. Sci. Top. Quantum Electron. 5, 401 (1999).
16. S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O'Reilly, and P. J. A. Thijs, IEEE Photonics Technol. Lett. 10, 1076 (1998); A. F. Phillips, S. J. Sweeney, A. R. Adams, and P. J.A. Thijs, IEEE J. Sci. Top. Quantum Electron. 5, 401 (1999).
17. D. Patel, A. R. Adams, P. D. Greene, and G. D. Henshall, Electron. Lett. 18, 527 (1982).
18. S. J. Sweeney, A. R. Adams, M. Silver, E. P. O'Reilly, J. R. Watling, A. B. Walker, and P. J. A. Thijs, Phys. Status Solidi B 211, 525 (1999).